AP3P7R0EP advanced power p-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss -30v simple drive requirement r ds(on) 7m fast switching characteristic i d -75a rohs compliant & halogen-free hbm esd 2kv description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.1 /w rthj-a 62 /w rating -30 + 20 total power dissipation 2 total power dissipation parameter drain-source voltage gate-source voltage drain current, v gs @ 10v halogen-free product -300 1 59.5 -55 to 150 201702231 -75 135 drain current, v gs @ 10v -47.8 maximum thermal resistance, junction-ambient -55 to 150 parameter operating junction temperature range thermal data pulsed drain current 1 storage temperature range a p3p7r0e series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package. g d s g d s to-220(p) .
AP3P7R0EP electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 7 m v gs =-4.5v, i d =-20a - - 15 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-5v, i d =-30a - 55 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-20a - 36 57.6 nc q gs gate-source charge v ds =-24v - 10 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 15 - nc t d(on) turn-on delay time v ds =-15v - 42 - ns t r rise time i d =-30a - 140 - ns t d(off) turn-off delay time r g =3.3 - 440 - ns t f fall time v gs =-10v - 300 - ns c iss input capacitance v gs =0v - 4300 6880 pf c oss output capacitance v ds =-15v - 590 - pf c rss reverse transfer capacitance f=1.0mhz - 330 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-30a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-30a, v gs =0v, - 18 - ns q rr reverse recovery charge di/dt=-100a/s - 6 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.starting t j =25 o c , v dd =-30v , l=0.3mh , r g =25 .
AP3P7R0EP fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 5 6 7 8 9 10 11 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20 a t c =25 0 50 100 150 200 250 300 0481216 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c - 10 v - 7.0 v - 6.0 v - 5.0 v v g = - 4.0 v 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -30a v g = -10v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = - 250ua 0 40 80 120 160 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v .
AP3P7R0EP fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. typical power dissipation fig 12. gate charge waveform 4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0 20406080 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -24 v i d = -20a 0 1000 2000 3000 4000 5000 6000 1 5 9 13 17 21 25 29 33 37 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms dc operation in this area limited by r ds(on) 0 20 40 60 80 0 50 100 150 t c , case temperature ( o c ) p d (w) .
AP3P7R0EP fig 13. normalized bv dss v.s. junction fig 14. transfer characteristics temperature fig 15. typ. drain-source on state fig 16. drain current v.s. case temperature resistance 5 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d = -1ma 0 10 20 30 40 50 0 20 40 60 80 100 120 -i d , drain current (a) r ds(on) (m ) t j =25 o c -4.5v v gs = -10v 0 20 40 60 80 0123456 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v 0 20 40 60 80 25 50 75 100 125 150 t c , case temperature ( o c ) -i d , drain current (a) .
AP3P7R0EP marking information 6 part numbe r 3p7r0e ywwsss date code (ywwsss) y last digit of the year ww week sss sequence .
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